Annealing behaviour of aluminium-implanted InP-Reference-Cited by-同舟云学术

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Annealing behaviour of aluminium-implanted InP

Published:2000-03 Issue: Volume:161-163 Page:673-676
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kyllönen V,Räisänen J,Seppälä A,Ahlgren T,Likonen J

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. Ion implantation in III–V compound semiconductors

2. Ion implantation damage in InP

3. Disorder saturation in heavy ion implanted semiconductors

4. A comprehensive study of defect production and annealing in ion implanted InP

5. A.R. Bayly, M. Cummings, P. Vohralik, K. Williams, D.R. Kingham, A.R. Waugh, J.M. Walls, SIMS VI, in: A. Benninghoven et al. (Ed.), Wiley, Chichester, 1988, pp. 169

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluorine-doping in titanium dioxide by ion implantation technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05

2. Photo-induced surface charge separation in Cr-implanted TiO2 thin film;Thin Solid Films;2002-09

3. The hillock formation on the basal planes of graphite due to ion interaction;Synthetic Metals;2001-11

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