Electronic properties of CaF2 nanodimensional islands on Si(): An MDS and UPS study
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Formation of dysprosium silicide wires on Si(001)
2. Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)
3. Self-assembled rare-earth silicide nanowires on Si(001)
4. Quasi‐one‐dimensional CaF2 islands formed on Si(001) by molecular beam epitaxy
5. Surface reconstruction in CaF2/Si(001) investigated by scanning tunneling microscopy
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1. Controlling In-Plane Isotropic and Anisotropic Orientation of Organic Semiconductor Molecules on Ionic Fluoride Dielectrics;The Journal of Physical Chemistry C;2017-02-20
2. Proximity effects and exchange bias in Co/MnF2(111) heterostructures studied by x-ray magnetic circular dichroism;Journal of Physics: Condensed Matter;2012-12-13
3. Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface;Journal of Physics: Condensed Matter;2011-07-25
4. Initial Stages of High-Temperature CaF2/Si(001) Epitaxial Growth Studied by Surface X-Ray Diffraction;Journal of Nanoscience and Nanotechnology;2011-04-01
5. STM and LEED studies of CaF2 submonolayer coverage on Si(001);Surface Science;2011-01
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