Research of Si and GaAs diode structures by Ion Beam Induced Charge (IBIC) collection-Reference-Cited by-同舟云学术

Research of Si and GaAs diode structures by Ion Beam Induced Charge (IBIC) collection

Published:1997-07 Issue:1-4 Volume:130 Page:557-563
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nishijima T.,Sekiguchi H.,Matsuda S.,Shiono N.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation damage on 6H-SiC Schottky diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-09

2. Investigation of the radiation hardness on semiconductor devices using the ion micro-beam;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

3. Study of basic mechanisms of semiconductor devices using ion beam induced charge (IBIC) collection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-07