Charge carrier lifetime modification in silicon by high energy H+ or He+ ion implantation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Production of Fast Switching Power Thyristors by Proton Irradiation
2. Localized lifetime control in insulated-gate transistors by proton implantation
3. Combined proton and electron irradiation for improved GTO thyristors
4. Production of fast-switching power thyristors by proton irradiation
5. Carrier Lifetime Reduction in Silicon by Proton Implantation Through MOS Structures
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2. Surface profile of minority carrier lifetime in 65 and 100 MeV fluorine ion irradiated n-Si (111);Radiation Physics and Chemistry;2017-01
3. The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement;Semiconductor Science and Technology;2006-04-19
4. Investigation of the damage as induced by 1.7MeV protons in an amorphous/crystalline silicon heterojunction solar cell;Solar Energy Materials and Solar Cells;2004-07
5. Modified C-t technique for determining the generation lifetime profile in MeV He+ implanted silicon;Vacuum;1998-07
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