Enhanced radiation hardness of photoluminescence from InAs quantum dots embedded in an AlAs/GaAs superlattice structure
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference28 articles.
1. Epitaxially Self-Assembled Quantum Dots
2. Proton implantation for isolation of n-type GaAs layers at different substrate temperatures
3. Recovery dynamics in proton-bombarded semiconductor saturable absorber mirrors
4. Lateral selectivity of ion-induced quantum well intermixing
5. Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures
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