Irradiation induced defects in Si1−xGex: The effect of alloying-Reference-Cited by-同舟云学术

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Irradiation induced defects in Si1−xGex: The effect of alloying

Published:2003-09 Issue:1 Volume:211 Page:80-90
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mesli A.,Nylandsted Larsen A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference39 articles.

1. Proceedings of IBMM1998, Nucl. Instr. and Meth. B 148 (1999);

2. IBMM2000, Nucl. Instr. and Meth. B 175–177 (2001)

3. Electronic Structure and Properties of Semiconductors;Watkins,1991

4. Recent advances with SiGe heterojunction bipolar transistors

5. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

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1. Point defect states in Sb-doped germanium;Journal of Applied Physics;2015-10-21

2. Germanium diffusion mechanisms in silicon from first principles;Physical Review B;2007-03-08

3. Vacancy-impurity pairs in relaxedSi1−xGexlayers studied by positron annihilation spectroscopy;Physical Review B;2006-04-14

4. The different behaviour of CiOi and CiCs defects in SiGe;Materials Science in Semiconductor Processing;2006-02

5. RADIATION DEFECT ENGINEERING;International Journal of High Speed Electronics and Systems;2005-03

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