Ion beam intermixing of semiconductor heterostructures for optoelectronic applications-Reference-Cited by-同舟云学术

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Ion beam intermixing of semiconductor heterostructures for optoelectronic applications

Published:1997-05 Issue: Volume:127-128 Page:418-422
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Goldberg R.D.,Mitchell I.V.,Poole P.,Labrie D.,Lafontaine H.,Aers G.C.,Williams R.,Dion M.,Charbonneau S.,Ramanujancha K.,Weatherly G.C.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Applications of Photonic Technology;Koteles,1985

2. Broadly tunable InGaAsP/InP laser based on a vertical coupler filter with 57‐nm tuning range

3. Laser beam heating and transformation of a GaAs‐AlAs multiple‐quantum‐well structure

4. Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices

5. Disorder of an AlAs‐GaAs superlattice by impurity diffusion

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1. Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots;Journal of Applied Physics;2010-06-15

2. Drastic ion-implantation-induced inter-mixing during the annealing of self-assembled InAs/InP(001) quantum dots;Nanotechnology;2006-12-08

3. Ion beam energy attenuation for fabrication of buried, variable-depth, optical waveguides;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05

4. Novel hot-electron light emitter;Physics and Simulation of Optoelectronic Devices VII;1999-08-06

5. Experimental analysis and modeling of buried waveguides fabricated by quantum-well intermixing;IEEE Journal of Quantum Electronics;1999

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