Damage and thermal annealing of In+ implanted a-axis sapphire-Reference-Cited by-同舟云学术

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Damage and thermal annealing of In+ implanted a-axis sapphire

Published:1997-01 Issue:1 Volume:122 Page:55-58
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Xie Dong-zhu,Cao De-xin,Zhu De-zhang

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference12 articles.

1. The structure and properties of ion-implanted A12O3

2. Effect of ion implantation on fracture stress of Al2O3

3. Formation of amorphous layers in Al2O3 by ion implantation

4. Optical properties of lattice defects in α-Al2O3

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification of c-axis sapphire implanted with high dose yttrium ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

2. Damage and thermal annealing of dual-ions (Pt and S) implanted YSZ material;Journal of Physics: Condensed Matter;1997-05-26

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