TiN structural modifications induced by bias voltage in a new dynamic controlled magnetron sputtering apparatus-Reference-Cited by-同舟云学术

TiN structural modifications induced by bias voltage in a new dynamic controlled magnetron sputtering apparatus

Published:2001-04 Issue: Volume:175-177 Page:626-629
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Tentardini E.K.,Blando E.,Hübler R.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. Electrical and colorimetric properties of TiN thin films prepared by DC reactive sputtering in a facing targets sputtering (FTS) system

2. Ion beam mixing of Ti–TiN multilayers for tribological and corrosion protection

3. H. Kupfer, F. Elstner, G. Hecht, F. Richter, TiN formation by reactive magnetron sputtering, Department of Physics, Technical University of Chemnitz, Germany

4. F. Richter, H. Kupfer, H. Giegengack, G. Schaarsmidt, F. Scholze, F. Elstner, G. Hecht, Fundamental mechanisms of titanium nitride formation by DC magnetron sputtering, Fachbereich Phisik, Technische Universität Chemnitz

5. Chemical vapour deposition of TiN on stainless steel

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