Characterization of silicon oxynitride films using ion beam analysis techniques
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Hydrogen and Nitrogen Loss during ERD Analysis of Siliicon (Oxy)nitrides
2. Radiation damage during heavy ion elastic recoil detection analysis of insulating materials
3. Elastic recoil detection analysis with heavy ion beams
4. Absolute coverage measurement of adsorbed CO and D2 on platinum
5. Absolute coverage measurement of adsorbed CO and D2 on platinum
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1. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2005-05
2. Silicon Oxynitride ECR-PECVD Films for Integrated Optics;Materials Science Forum;2005-03
3. Structural analysis of silicon oxynitride films deposited by PECVD;Materials Science and Engineering: B;2004-09
4. Deposition and characterization of silicon oxynitride for integrated optical applications;Journal of Non-Crystalline Solids;2004-06
5. Differential cross-sections for nuclear reactions 14N(d,p5)15N, 14N(d,p0)15N, 14N(d,α0)12C and 14N(d,α1)12C;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
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