Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference8 articles.
1. Ecologically Friendly Metal-Silicide Semiconductor Reserch. Developments in Semiconducting Silicides for Optoelectronic Applications.
2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm
3. Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2
4. TEM investigation of ion beam synthesized semiconducting FeSi2
5. Electrical characterization of the β‐FeSi2/Si heterojunction after thermal oxidation
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of electrically active defects in undoped BaSi2 light absorber layers using deep-level transient spectroscopy;Japanese Journal of Applied Physics;2018-06-12
2. Epitaxial growth of β-FeSi2thin films on Si(111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection;Japanese Journal of Applied Physics;2016-05-24
3. Characterization of defect levels in undoped n-BaSi2epitaxial films on Si(111) by deep-level transient spectroscopy;Japanese Journal of Applied Physics;2015-03-03
4. Effects of band offset and doping concentration on the photovoltaic properties of n-β-FeSi2 /p-Si and p-β-FeSi2 /n-Si heterojunction solar cells;Surface and Interface Analysis;2014-02-05
5. Conduction mechanism analysis in β-FeSi2/n-Si heterojunction throughJ–V–Tmeasurement;Semiconductor Science and Technology;2008-08-14
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