Physical and optical characterisation of Ge-implanted silica
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. C. Flytzanis, J. Hutter, in: G.P. Agarwal, R.W. Boyd (Eds.), Contemporary Nonlinear Optics, Academic Press, Boston, 1992
2. Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems
3. Chapter 5 Silicon and Germanium Nanoparticles
4. Very large optical nonlinearity of semiconductor microcrystallites
5. Nonlinear optical properties of semiconductor nanocrystals
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1. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation;Journal of Applied Physics;2008-06-15
2. Ge–Si system nanoclusters in Si matrix formed by solid-phase epitaxy;Applied Physics Letters;2005-05-16
3. Germanium nanoclusters in germanosilicate glass heat-treated in hydrogen;Inorganic Materials;2003
4. Defect-related photoluminescence and Raman studies on the growth of Ge nanocrystals during annealing of Ge+-implanted SiO2 films;Thin Solid Films;2002-06
5. Linear optical properties of Ge nanocrystals in silica;Applied Physics Letters;2001-10-08
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