Range parameters of implanted into Si and SiO2-Reference-Cited by-同舟云学术

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Range parameters of implanted into Si and SiO2

Published:2001-04 Issue: Volume:175-177 Page:46-50
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

de Souza J.P,Behar M,Dias J.F,dos Santos J.H.R

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

1. J.F. Ziegler, J.P. Biersack, U. Littmark, in: J.F. Ziegler (Ed.), Stopping and Ranges of Ions in Solids, Vol. 1, Pergamon, New York, 1980

2. Evidence for an insulator-metal effect on the Z1-range oscillations in the nuclear stopping regime

3. Z1-oscillations in low-energy heavy-ion ranges

4. Range profiles of 10 to 390 keV ions (29 ≦ Z1 ≦ 83) implanted into amorphous silicon

5. Range parameters study of medium-heavy ions implanted into light substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transition from atomistic to macroscopic cluster stopping in Au;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-09

2. Range and longitudinal range straggling with various stopping power formulations for oxygen ions in Si and SiO2;physica status solidi (b);2005-10

3. Comparison of theoretical stopping powers and application to the range calculation for bismuth ions in Si and SiO2;Vacuum;2005-08

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