In situ modification of the energetic structure of the n-GaP/NH3 junction in the presence of solvated electrons-Reference-Cited by-同舟云学术

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In situ modification of the energetic structure of the n-GaP/NH3 junction in the presence of solvated electrons

Published:1988-05 Issue:1 Volume:246 Page:29-42
ISSN:0022-0728
Container-title:Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
language:en
Short-container-title:Journal of Electroanalytical Chemistry and Interfacial Electrochemistry

Author:

Guyomard D.,Mathieu C.,Herlem M.

Publisher

Elsevier BV

Subject

General Medicine,General Chemistry,General Medicine

Reference22 articles.

1. Mise au Principes de base de l'électrochimie des semi-conducteurs

2. Electron energy levels in semiconductor electrochemistry

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1. Synthesis of K2Se solar cell dopant in liquid NH3 by solvated electron transfer to elemental selenium;Electrochemistry Communications;2018-08

2. Electrochemical Comparisons between GaAs and InP in Liquid Ammonia regarding the Anodic Passivation Process;Journal of The Electrochemical Society;2011

3. The pH response of the InP/liquid ammonia interface at 223K: A pure nernstian behavior;Electrochimica Acta;2010-10

4. Pore growth onn-InP in liquid ammonia: electrode potential and morphology evolution;physica status solidi (c);2008-11

5. Anodic behavior and pore growth of n-InP in acidic liquid ammonia;Comptes Rendus Chimie;2008-09

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