Dissolution experiments at irradiated GaP electrodes by means of labelled phosphorous
Author:
Publisher
Elsevier BV
Subject
General Medicine,General Chemistry,General Medicine
Reference28 articles.
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3. The Rate of the Photoelectrochemical Generation of Hydrogen at p‐Type Semiconductors
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5. Photocurrent onset potential and flatband potential of a p‐type GaP semiconducting photoelectrode
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Neutron irradiation induced effects on the electrochemical current-voltage characteristics of n-GaAs;Radiation Effects and Defects in Solids;1996-01
2. On the Kinetics of the Anodic Oxidation of GaP;Berichte der Bunsengesellschaft für physikalische Chemie;1995-12
3. Neutron irradiation induced changes of the electrochemical properties of n-GaAs;Journal of Electroanalytical Chemistry;1995-08
4. On restoring the original semiconducting properties of n-GaP after neutron activation;Physica Status Solidi (a);1995-04-16
5. Competition between dissolution and redox reactions in the electrochemistry ofn-GaP;Journal of Radioanalytical and Nuclear Chemistry Articles;1995-04
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