The C-V method for characterizing ISFET or EOS devices with ion-sensitive membranes-Reference-Cited by-同舟云学术

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The C-V method for characterizing ISFET or EOS devices with ion-sensitive membranes

Published:1990-06 Issue:1-2 Volume:286 Page:23-40
ISSN:0022-0728
Container-title:Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
language:en
Short-container-title:Journal of Electroanalytical Chemistry and Interfacial Electrochemistry

Author:

Fabry P.,Laurent-Yvonnou L.

Publisher

Elsevier BV

Subject

General Medicine,General Chemistry,General Medicine

Reference24 articles.

1. The history of chemically sensitive semiconductor devices

2. Stability of silicon nitride/silicon dioxide/silicon electrodes used in pH microelectronic sensors

3. The preparation of CHEMFET selective gates by thin silica layer grafting and their behaviour

4. Fluoride-sensitive membrane for ISFETs

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