The p-Inp semiconductor / electrolyte contact under depletion conditions: Impedance, reverse currents and photopotentials
Author:
Publisher
Elsevier BV
Subject
Electrochemistry,General Chemical Engineering,Analytical Chemistry
Reference57 articles.
1. Electrical study of Schottky-barrier heights on atomically cleanp-type InP(110) surfaces
2. Study of the schottky barrier at the n- and p-type indium phosphide electrode/electrolyte interface
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4. 11.5% solar conversion efficiency in the photocathodically protectedp‐InP/V3+‐V2+‐HCI/C semiconductor liquid junction cell
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