Spectroscopic study of radiative recombinations in GaAs/AlGaAs heterostructures-Reference-Cited by-同舟云学术

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Spectroscopic study of radiative recombinations in GaAs/AlGaAs heterostructures

Published:1991-01 Issue:2 Volume:9 Page:161-164
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhao Q.X.,Bergman J.P.,Holtz P.O.,Monemar B.,Ensslin K.,Sundaram M.,Merz J.L.,Gossard A.C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface

2. Recombination via two-dimensional excitons in GaAs-(AlGa)As heterojunctions

3. Optical spectroscopy of two-dimensional electrons inGaAs−AlxGa1−xAssingle heterojunctions

4. Reduction of the electron density in GaAs-AlxGa1−xAs single heterojunctions by continuous photoexcitation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge and spin dynamics in a two-dimensional electron gas;Journal of Physics: Condensed Matter;2007-06-11

2. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001

3. Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0.53Ga0.47As heterostructures;Physical Review B;1993-10-15

4. Optical investigation of Fermi-edge singularities inAl0.35Ga0.65As/GaAs heterostructures;Physical Review B;1992-08-15

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