Vertical electronic transport in novel semiconductor heterojunction structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Resonant tunneling in semiconductor double barriers
2. Resonant tunneling through quantum wells at frequencies up to 2.5 THz
3. AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio
4. Resonant tunneling of holes in AlAs‐GaAs‐AlAs heterostructures
5. Sequential resonant tunneling through a multiquantum well superlattice
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3. Electron Tunneling in Semiconductors;Basic Properties of Semiconductors;1992
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