Superlattice doping interfaces
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Planar-doped barriers in GaAs by molecular beam epitaxy
2. A majority‐carrier camel diode
3. Negative differential resistance through real‐space electron transfer
4. Tunneling in a finite superlattice
5. Resonant tunneling through quantum wells at frequencies up to 2.5 THz
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Negative Differential Resistance in Superlattice and Heterojunction Channel Conduction Devices;Negative Differential Resistance and Instabilities in 2-D Semiconductors;1993
2. Spectrally dependent photocurrent measurements inn+‐n‐n+heterostructure devices;Applied Physics Letters;1989-05-15
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