Well width dependence of the carrier life time in InGaAs/InP quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Oscillator strength and optical selection rule of excitons in quantum wells
2. Exciton binding energies in GaInAs/InP quantum wells determined by thermally modulated photoluminescence
3. Linewidth dependence of radiative exciton lifetimes in quantum wells
4. U. Cebulla, A. Forchel, S. Subbanna, G. Griffiths, H. Kroemer, to be published
5. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
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1. Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures;Scientific Reports;2018-08-17
2. Carrier dynamics in Ga(NAsP)/Si multi-quantum well heterostructures with varying well thickness;Superlattices and Microstructures;2016-05
3. Recombination dynamics in strained In1-xGaxAs/InP-quantum well structures;Superlattices and Microstructures;1994-04
4. Chapter 5 Optical Properties of Ga1-xInxAs/InP Quantum Wells;Semiconductors and Semimetals;1994
5. The lifetime of quasi-free exciton magnetic polaron in a quantum well with semimagnetic barriers;Le Journal de Physique IV;1993-10
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