Tunnelling and hot electron effects in single barrier heterostructure devices-Reference-Cited by-同舟云学术

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Tunnelling and hot electron effects in single barrier heterostructure devices

Published:1986-01 Issue:1 Volume:2 Page:49-55
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Eaves L.,Guimaraes P.S.S.,Snell B.R.,Sheard F.W.,Taylor D.C.,Toombs G.A.,Portal J.C.,Dmowski L.,Singer K.E.,Hill G.,Pate M.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Proc. Int. Conf. on Phys. of Semiconductors;Esaki,1984

2. Quantum well oscillators

3. Direct Observation of Ballistic Transport in GaAs

4. Inverted base‐collector tunnel transistors

5. Sequential Single-Phonon Emission in GaAs-AlxGa1−xAsTunnel Junctions

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magneto-Tunneling Between 2-Dimensional Systems;Low-Dimensional Electronic Systems;1992

2. Electric-field domains in semiconductor superlattices: A novel system for tunneling between 2D systems;Physical Review Letters;1991-09-16

3. Quantum magnetotunneling time of electrons in Ga1−xAlxAGaAs superlattices;Solid State Communications;1991-09

4. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields;Physics of Quantum Electron Devices;1990

5. Tranverse magnetotunneling inAlxGa1−xAs capacitors. I. Angular dependence;Physical Review B;1989-10-15

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