Pseudomorphic InGaAs HEMTs on GaAs substrates with undoped and doped channels-Reference-Cited by-同舟云学术

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Pseudomorphic InGaAs HEMTs on GaAs substrates with undoped and doped channels

Published:1990-01 Issue:3 Volume:8 Page:341-344
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Papaioannou G.,Roditi E.,Michelakis C.,Martin E.,Hatzopoulos Z.,Papastamatiou M.,Kiriakidis G.,Halkias G.,Christou A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET

2. Determination of carrier saturation velocity in short-gate-length modulation-doped FET'S

3. Energy Structure and Quantized Hall Effect of Two-Dimensional Holes

4. Analysis of high electron mobility transistors based on a two-dimensional numerical model

5. Model for modulation doped field effect transistor

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1. RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs;Micro and Nanostructures;2022-11

2. TAILORING THE TWO DIMENSIONAL ELECTRON GAS DISTRIBUTION BY SELECTIVE DOPING OF THE QUANTUM WELL;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;1991-04

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