Photoluminescence study of double barrier resonant tunneling diodes grown by metalorganic vapour phase epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence study of double barrier resonant tunneling diodes grown by metalorganic vapour phase epitaxy

Published:1990-01 Issue:4 Volume:8 Page:467-474
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Tews H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Proceedings of the 16th International Symposium on GaAs and Related Compounds;Schnell,1989

2. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic

3. Pseudomorphic bipolar quantum resonant-tunneling transistor

4. resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromodulation of the Negative Differential Resistance in an AlGaAs/GaAs Resonant Tunneling Diode;Journal of the Korean Physical Society;2019-01

2. Photoluminescence mapping of AlGaAs/GaAs HBT layer sequences;Journal of Crystal Growth;1992-11

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