Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface-Reference-Cited by-同舟云学术

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Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface

Published:1992-01 Issue:2 Volume:12 Page:267-271
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Sobiesierski Z.,Westwood D.I.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Surface quantum wells

2. Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells

3. Near-surface GaAs/Ga0.7Al0.3As quantum wells: Interaction with the surface states

4. Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy

5. Z. Sobiesierski “unpublished”.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface passivation of In0.53Ga0.47As ridge quantum wires using silicon interface control layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07

2. Photoluminescence Spectroscopy;Epioptics;1995

3. Photoluminescence observation of quantum confined stark effect caused by band bending near the surface of etched structures with GaAs/AlGaAs wells;Le Journal de Physique IV;1993-10

4. Photoluminescence spectroscopy of near-surface quantum wells: Electronic coupling between quantized energy levels and the sample surface;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07

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