A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Absorption spectroscopy onGa0.47In0.53As/Al0.48LIn0.52As multi-quantum-well heterostructures. I. Excitonic transitions
2. Absorption spectroscopy onGa0.47In0.53As/Al0.48In0.52As multi-quantum-well heterostructures. II. Subband structure
3. Room-temperature optical absorption and confinement effect in Ga0.47In0.53As/Al0.48In0.52As MQW
4. Delocalized excitons in semiconductor heterostructures
5. Resonance Raman scattering in GaAs/AlAs thin-layer superlattices under high pressure
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2. The effect of strain and indium content on the optical properties of GaInAs/GaAs ternary alloys;Solid State Sciences;2021-01
3. Linear optical properties of Al1-xInxAs and In1-xGaxAs for photovoltaic applications: A first-principles investigation with the (TB-mBJ) approach;Optik;2017-10
4. Experimental Methods;Semiconductor Optics;2012
5. PHONON BEHAVIOR AND INTERFACIAL STRESS IN THE STRAINED (INAS)(M)/(GAAS)(N) ULTRATHIN SUPERLATTICES;J CRYST GROWTH;1995
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