Gain and loss mechanisms in InGaAs/InGaAsP multi-quantum-well laser structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser
2. High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes
3. Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m
4. Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
5. Nonlinear optical gain in InGaAs/InGaAsP quantum-wells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-gain excitonic lasing from a single InAs monolayer in bulk GaAs;Applied Physics Letters;1998-03-23
2. Well number, length, and temperature dependence of efficiency and loss in InGaAsP-InP compressively strained MQW ridge waveguide lasers at 1.3 μm;IEEE Journal of Quantum Electronics;1997
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