Dependence of lead chalcogenide diode laser radiation on lattice misfit induced stress-Reference-Cited by-同舟云学术

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Dependence of lead chalcogenide diode laser radiation on lattice misfit induced stress

Published:1990-01 Issue:2 Volume:7 Page:97-102
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Böttner H.,Schießl U.,Tacke M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Recent advances in lead-chalcogenide diode lasers

2. Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques

3. Partin, D.L., Trush, C.M.: GM Research Publication, GMR-4615.

4. Infrared double‐heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe

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1. Optical deformation potentials for PbSe and PbTe;Physical Review B;2004-09-08

2. 60°C lead salt laser emission near 5-μm wavelength;Infrared Physics & Technology;1999-08

3. PbSrS MQW lasers and the effect of quantum well on operation temperature;Solid-State Electronics;1994-04

4. Embossed-grating lead chalcogenide buried-waveguide distributed-feedback lasers;IEEE Journal of Quantum Electronics;1994-02

5. Lead-Strontium-Telluride Films and Lasers Prepared by Hot-Wall Epitaxy;Japanese Journal of Applied Physics;1994-01-15

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