Transmission and photoreflectance spectra in highly strained InGaAs-GaAs multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
2. Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
3. Defects in epitaxial multilayers
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1. Cyclotron and combined phonon-assisted resonances in the double-well heterostructure In0.65Ga0.35As/In0.52Al0.48As at megagauss magnetic fields;Physical Review B;2018-12-18
2. Numerical simulation of a coupling effect on electronic states in quantum dots;Superlattices and Microstructures;2010-07
3. Strain-induced electronic energy changes in multilayered InGaAs∕GaAs quantum wire structures;Journal of Applied Physics;2007-02-15
4. Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells;Applied Surface Science;2005-02
5. Enhancement of the activation energy in modulation-doped AlxGa1−x As/InyGa1−yAs/GaAs quantum wells due to an embedded deep step layer;Materials Science and Engineering: B;2004-10
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