Raman scattering and photoluminescence studies of two-dimensional electron systems in Ge/GaAs heterostructures-Reference-Cited by-同舟云学术

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Raman scattering and photoluminescence studies of two-dimensional electron systems in Ge/GaAs heterostructures

Published:1985-01 Issue:2 Volume:1 Page:161-164
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Gammon D.,Merlin R.,Beard W.T.,Wood C.E.E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface

2. Self-consistent calculations of interface states and electronic structure of the (110) interfaces of Ge-GaAs and AlAs-GaAs

3. Polar heterojunction interfaces

4. Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfaces

5. Heterojunctions and Metal-semiconductor Junctions;Milnes,1972

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth and band bending ofn- andp-type Ge on GaAs(001);Physical Review B;1988-10-15

2. Subband structure ofn-type accumulation and inversion layers in GaAs-Ge heterojunctions;Physical Review B;1985-07-15

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