Vertical transport in multilayer semiconductor structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference20 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The emergence of superlattice and Stark ladder phenomena in finite layered structures;Semiconductor Science and Technology;1990-03-01
2. High-pressure studies of resonant tunnelling in a graded parameter superlattice and in double barrier structures of GaAs/AlAs;Semiconductor Science and Technology;1989-09-01
3. Consequence of layer thickness fluctuations on superlattice miniband structures;Applied Physics Letters;1988-12-26
4. Thermionic emission and Gaussian transport of holes in a GaAs/AlxGa1−xAs multiple-quantum-well structure;Physical Review B;1988-09-15
5. Novel Tunnelling Structures: Physics and Device Implications;Physics and Applications of Quantum Wells and Superlattices;1987
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