CATHODOLUMINESCENCE RELATED TO DISLOCATIONS IN GaAs
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Publisher
Elsevier
Reference18 articles.
1. Impurity effects on the generation, velocity, and immobilization of dislocations in GaAs
2. Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs Crystal
3. Spatially Resolved Cathodoluminescence Study of Semi‐Insulating GaAs Substrates
4. Mechanism for the threshold voltage shift of a GaAs field‐effect transistor around dislocations
5. Interaction between Dislocations and Non-Radiative Recombination Centers in GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Micro Raman study of dislocations in n-type doped GaAs;Journal of Raman Spectroscopy;1993-11
2. Capacitance transient study of deformation-induced defects in n-type GaAs;Physica Status Solidi (a);1993-08-16
3. High Spatial Resolution Raman Investigations: of Grown-in Dislocations in Si-doped GaAs;Crystal Research and Technology;1992
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