INVESTIGATION OF ONE-DIMENSIONAL DEFECTS IN SI USING THE EDSR-Reference-Cited by-同舟云学术

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INVESTIGATION OF ONE-DIMENSIONAL DEFECTS IN SI USING THE EDSR

Published:1990 Issue: Volume: Page:1417-1422
ISSN:
Container-title:Defect Control in Semiconductors
language:
Short-container-title:

Author:

KVEDER V.V.,MCHEDLIDZE T.R.,OSIPYAN Yu.A.,SHALYNIN A.I.

Publisher

Elsevier

Reference12 articles.

1. Defects in Semiconductors, Materials Science Forum Volumes 10–12;Kisielowski-Kemmerich,1986

2. COMBINED RESONANCE IN SEMICONDUCTORS

3. On the Energy Spectrum of Dislocations in Silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Regular Dislocation Networks in Silicon. Part I: Structure;Solid State Phenomena;2007-10

2. Silicon, paramagnetic centers: principal values of g-tensors of orthorhombic-I centers;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part a: Group IV Elements

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