Growth of Doped Silicon Layers by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Growth of Doped Silicon Layers by Molecular Beam Epitaxy

Published:1981 Issue: Volume: Page:175-215
ISSN:0167-790X
Container-title:Impurity Doping Processes in Silicon
language:
Short-container-title:

Author:

BEAN J.C.

Publisher

Elsevier

Reference81 articles.

1. Progress in Solid-State Chemistry;Cho,1975

2. The growth and structure of semiconducting thin films

3. Über den Aufbau und die Struktur aufgedampfter Siliciumschichten und ihr Verhalten bei hohen Temperaturen

4. Epitaxial Growth of Silicon by Vacuum Evaporation

5. Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporation

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ Monitoring of Crystal Growth in LPE using Microprocessor;IETE Technical Review;1998-01

2. Retrospect and Prospects of MBE;The Technology and Physics of Molecular Beam Epitaxy;1985

3. Introduction;The Technology and Physics of Molecular Beam Epitaxy;1985

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