1. Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs;Rim;IEDM Tech Dig,2003
2. Augendre E et al. On the scalability of source/drain current enhancement in thin film sSOI. In: ESSDERC Proc; 2005. p. 301–4.
3. Thean AV-Y et al. Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology. In: IEEE VLSI Tech Symp Proc; 2005. p. 134–5.
4. Strain relaxation in patterned strained silicon directly on insulator structures;Lei;Appl Phys Lett,2005
5. Andrieu F et al. Co-integrated dual strained channels on fully depleted sSDOI CMOSFETs with HfO2/TiN gate stack down to 15nm gate length. In: IEEE Intern SOI Conf Digest; 2005. p. 223–4.