Cryogenic low noise 2.2–3GHz amplifier
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference9 articles.
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2. Pospieszalski M, Wollack E. Characteristics of broadband INP HFET millimeter-wave amplifiers and their applications in radioastronomy receivers. In: Topical symposium on millimeter waves, 1997; 1997. p. 143–6. doi:10.1109/TSMW.1997.702491.
3. Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1K;Oukhanski;Rev Sci Instrum,2003
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1. A wideband cryogenic microwave low-noise amplifier;Beilstein Journal of Nanotechnology;2020-09-30
2. Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature;Science Bulletin;2019-04
3. Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier;Journal of Low Temperature Physics;2017-02-27
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