Growth kinetics of LPE Ga0.83Al0.17Sb layers grown from supercooled solutions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
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1. Effect of substrate conductivity on the thickness and composition of GaAlSb epitaxial layers grown by liquid phase epitaxy;Thin Solid Films;2011-03
2. Electrical and photoluminescent properties of high‐quality GaSb and AlGaSb layers grown from Sb‐rich solutions by liquid‐phase epitaxy;Journal of Applied Physics;1995-02-15
3. Electrical characteristics and energy band offsets innGaSb‐pGa0.83Al0.17Sb;Journal of Applied Physics;1991-11-15
4. Liquid phase epitaxial Ga0.96Al0.04Sb p/n junctions;Journal of Crystal Growth;1989-11
5. Determination of the band discontinuities of GaSb(n)–Ga0.83Al0.17Sb(p) heterojunction by capacitance–voltage measurements;Physica Status Solidi (a);1989-09-16
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