Assessment of epitaxial layers by automated scanning double axis diffractometry-Reference-Cited by-同舟云学术

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Assessment of epitaxial layers by automated scanning double axis diffractometry

Published:1983-12 Issue:1-3 Volume:65 Page:672-678
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Halliwell M.A.G.,Lyons M.H.,Tanner B.K.,Ilczyszyn P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Characterization of Crystal Growth Defects by X-Ray Methods;Hart,1980

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1. X-Ray characterisation of indium phosphide substrates;Materials Science and Engineering: B;1999-12

2. On the substrate temperature dependence of the properties of In0.52Al0.48As/InP structures grown by molecular beam epitaxy;Journal of Materials Research;1996-09

3. Optical and structural characterizations for optimized growth of In0.52Al0.48As on InP substrates by molecular beam epitaxy;Materials Science and Engineering: B;1995-12

4. A photoluminescence and X-ray diffraction analysis of InAlAs/InP heterostructures grown by molecular beam epitaxy;Thin Solid Films;1995-10

5. On factors affecting alloy clustering in In0.52Al0.48As layers grown on InP substrates by molecular beam epitaxy;Superlattices and Microstructures;1995-03

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