Planar doping by interrupted MOVPE growth of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. MOVPE Growth of Ga1-xAlxAs-GaAs Quantum Well Heterostructures
2. Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy
3. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
4. Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
5. A New Method for Growing GaAs Epilayers by Low Pressure Organometallics
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1. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
2. Si-doping into GaAs grown by metalorganic vapor phase epitaxy using bisdiisopropylaminosilane;Journal of Crystal Growth;1998-12
3. Very High Silicon Concentration by MOVPE in GaAs;physica status solidi (a);1998-08
4. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
5. Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C;Journal of Crystal Growth;1997-08
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