Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure
2. The MOCVD growth without prereaction of ZnSe and ZnS layers
3. Reflectivity analysis of ZnS layers grown on GaAs and Si substrates by metal organic vapour-phase epitaxy
4. Tackling problems in the growth of ZnS/Se through precursor design
5. Metalorganic vapour phase epitaxy growth of ZnS layers by (t-Bu)SH and Me2Zn:Et3N precursors
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures;Progress in Crystal Growth and Characterization of Materials;2002-01
2. MOCVD growth and characterization of ZnS and Zn1−xMgxS alloys;Journal of Crystal Growth;2000-12
3. Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results;Journal of Crystal Growth;1999-07
4. Structural and optical parameters of films deposited on quartz substrates by laser ablation;Semiconductor Science and Technology;1998-12-01
5. Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor;Journal of Applied Physics;1998-12
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