Atomic layer epitaxy growth of ZnS on (100)GaAs using molecular beam epitaxy system-Reference-Cited by-同舟云学术

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Atomic layer epitaxy growth of ZnS on (100)GaAs using molecular beam epitaxy system

Published:1995-03 Issue:3 Volume:148 Page:223-231
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tadokoro Toyoyasu,Ohta Shin-ichi,Ishiguro Takashi,Ichinose Yukio,Kobayashi Satoshi,Yamamoto Naoki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Proc. 5th Intern. Conf. on Molecular Beam Epitaxy,1988

2. Proc. 4th Intern. Conf. on Metalorganic Vapor Phase Epitaxy,1988

3. Molecular Layer Epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15

4. Optimum growth and properties of ZnS/GaAs(100) epilayers by hot-wall epitaxy;Journal of Crystal Growth;1998-11

5. Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method;Journal of Materials Research;1998-06

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