heterojunction bipolar transistors grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
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1. High frequency AlGaAs/GaAs heterojunction bipolar transistors: the role of MOVPE;Journal of Crystal Growth;1991-01
2. HIGH QUALITY GaAs-AlGaAs FOR HETEROJUNCTION BIPOLAR TRANSISTORS (HBTs) BY MOCVD;Frontiers of Materials Research: Electronic and Optical Materials;1991
3. Advances in metalorganic vapor-phase epitaxy;IBM Journal of Research and Development;1990-11
4. References;Thin Films by Chemical Vapour Deposition;1990
5. Electrical characterization of GaAs/Al0.30Ga0.70Asp+‐nheterojunctions grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;1989-06-15
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