Abrupt OMVPE grown GaAs/GaAlAs heterojunctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE
2. Monolayer heterointerfaces and thin layers (∼10 Å) in AlxGa1−xAs-GaAs superlattices grown by metalorganic chemical vapour deposition
3. Optical characterization of interface disorder in multi-quantum well structures
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1. Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II–VI semiconductors using negative cluster ions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
2. Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE;Journal of Crystal Growth;1998-06
3. Two-dimensional simulation of quantum well lasers;European Transactions on Telecommunications;1990-07
4. Mechanisms in metal-organic chemical vapour deposition;Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences;1990-02-23
5. Electrical characterization of GaAs/Al0.30Ga0.70Asp+‐nheterojunctions grown by metalorganic vapor phase epitaxy;Journal of Applied Physics;1989-06-15
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