CH3I vapor etching of masked and patterned GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Vapor etching of GaAs and AlGaAs by CH3I
2. OMVPE regrowth of CH3I-vapor-etched GaAs
3. Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE
4. AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth
5. Effect of Crystal Orientation on Anisotropic Etching and MOCVD Growth of Grooves on GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process;Microelectronic Engineering;2005-04
2. Plasma etching of III-nitrides in ICl/Ar and IBr/Ar plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-05
3. ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides;Applied Physics Letters;1996-09-02
4. Comparison of ICl and IBr for Dry Etching of III-Nitrides;MRS Proceedings;1996
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