Photoluminescence studies of modulation-doped strained multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
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2. Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra
3. Two‐dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation‐doped quantum well structure
4. Excitonic enhancement of the Fermi-edge singularity in a dense two-dimensional electron gas
5. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
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1. Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure;Nanomaterials;2021-02-26
2. Gain coefficient method for amplified spontaneous emission in thin waveguided film of a conjugated polymer;Applied Physics Letters;2008-10-20
3. Correlation between optical and electrical properties in In0.52Al0.48As∕InxGa1−xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates;Journal of Applied Physics;2006-08
4. Electron Microscopy of Nanoledges at the (001)InAs/(001)GaAs Interface for an Approximate Orientation Relationship;physica status solidi (a);1999-08
5. Photoluminescence study of one-side-modulation-doped asymmetric step quantum wells;Solid State Communications;1998-06
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