LEC growth of large InP single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Herstellung und elektrische Eigenschaften von InP und GaAs
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3. Liquid encapsulation crystal pulling at high pressures
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5. Growth and Characterization of GaAsSb-GaAlAsSb Lattice-Matched Heterojunctions
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1. Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy;Journal of The Electrochemical Society;2007
2. On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy;physica status solidi (c);2006-06
3. Redistribution coefficients of metal impurities in indium phosphide grown by synthesis-solute diffusion technique;Ceramics International;1996-01
4. Rapid synthesis of indium phosphide;Review of Scientific Instruments;1985-05
5. Boron contamination and precipitation during the growth of InP;Journal of Crystal Growth;1981-09
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