A scanning tunnelling microscopy study of the deposition of Si on GaAs(001); implications for Si δ-doping
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
2. Reflection high‐energy electron diffraction study of the GaAs:Si:GaAs system
3. Self-organization during Si incorporation in MBE-grown vicinal GaAs(001) surfaces
4. Self-organized in-plane incorporation of Si atoms in GaAs by molecular beam epitaxy
5. Migration of Si in δ-doped GaAs
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1. Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction;Japanese Journal of Applied Physics;2002-04-30
2. IN SITU OBSERVATION DURING MOLECULAR BEAM EPITAXY: IMPURITY INCORPORATION AND DISSIMILAR MATERIALS EPITAXIAL GROWTH ON GaAs(001);Handbook of Surfaces and Interfaces of Materials;2001
3. The Surfactant Effect in Semiconductor Thin-Film Growth;Solid State Physics;2000
4. Post-annealing-induced free-carrier compensation in shallow-buried δ layers of GaAs(100);Surface Science;1999-01
5. Continuous variation in modulation period of charge-induced reconstruction of GaAs(001) surface;Surface Science;1998-10
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