Carbon background in P-based III-V semiconductors grown by metalorganic molecular beam epitaxy using ethyl-metalorganic sources-Reference-Cited by-同舟云学术

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Carbon background in P-based III-V semiconductors grown by metalorganic molecular beam epitaxy using ethyl-metalorganic sources

Published:1995-05 Issue: Volume:150 Page:241-245
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yoshimoto Masahiro,Tanaka Sigehisa,Tsuji Tsutsumi,Kurata Hideaki,Nishimura Kou,Matsunami Hiroyuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Use of triethylindium and bisphosphinoethane for the growth on InP by chemical beam epitaxy

2. 3.1×105 cm2/Vs peak electron mobilities in InP grown by chemical beam epitaxy

3. Surface emitting lasers grown by chemical beam epitaxy

4. Zinc-doping of InP during chemical beam epitaxy using diethylzinc

5. Carbon doping of GaP, GaInP, and AlInP in metalorganic molecular beam epitaxy using methyl and ethyl precursors

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1. Improvement of InGaP solar cells grown with TBP in planetary MOVPE reactor;Solar Energy Materials and Solar Cells;2023-08

2. On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy;Thin Solid Films;2012-08

3. Vertical GaP nanowires arranged at atomic steps on Si(111) substrates;Applied Physics Letters;2006-07-17

4. Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2003-12

5. Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy;Thin Solid Films;2003-04

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