Epitaxial growth and photoluminescence characterization of ZnSe: Na films by low-pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Metalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe
2. Growth ofp‐type ZnSe:Li by molecular beam epitaxy
3. Ionization energy of the shallow nitrogen acceptor in zinc selenide
4. Proc. 3rd Intern. Conf. on Shallow Inpurities in Semiconductors;Yamada,1988
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1. Effect of oxygen on the optical properties of ZnSe in the region of 0.44–20 μm;Journal of Applied Spectroscopy;1996-07
2. Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry;Physica B: Condensed Matter;1993-04
3. Preparation and purification of dimethylzinc and the effect of iodine doping on the opto-electronic properties of epitaxial ZnSe layers grown by metalorganic chemical vapour deposition;Journal of Crystal Growth;1993-03
4. Characterization of ZnSe/GaAs heterojunctions by SIMS and ellipsometry;Wide-Band-Gap Semiconductors;1993
5. OMVPE of Compound Semiconductors;Thin Film Processes;1991
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