The sources of atomic steps in epitaxial lateral overgrowth of Si
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference2 articles.
1. Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
2. Liquid Phase Epitaxy;Advances in Materials Research;2009
3. Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
4. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
5. Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent;Journal of Applied Physics;2005-10
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